Application Cases

Experiment Name: Non-Contact Non-Destructive In-Situ Detection of Quantum Dot Thin Films

Experiment Content:Quantum dot thin films, as a core functional layer, play a crucial role in various optoelectronic devices such as light-emitting diodes and displays. The non-uniformity in the thickness of quantum dot thin films inevitably affects the overall optoelectronic properties of the devices. However, traditional methods find it challenging to quickly obtain information on the thickness distribution without introducing additional damage. This paper proposes a non-contact non-destructive method for detecting the thickness of quantum dot thin films. Under the influence of a high electric field, quantum dot thin films exhibit photoluminescence quenching, which is related to the thickness of the quantum dot film and the magnitude of the applied voltage.

Research Direction: Process Inspection of Optoelectronic Devices

Testing Equipment:ATA-7025 high-voltage amplifier, translation stage, optical fixtures, metal probe, signal generator, etc.

Experimental Process:

Non-contact non-destructive in-situ detection experimental setup for quantum dot thin films After UV light excites the photoluminescence of the quantum dot thin film, a high-voltage sinusoidal signal amplified by the power amplifier ATA-7025 is applied to the metal probe and placed across the quantum dot thin film. The changes in the photoluminescence spectrum of the quantum dot thin film are then observed to study the effects of the applied voltage magnitude and the thickness of the quantum dot thin film on the degree of quenching. For arrays of quantum dot thin films, a CCD camera system captures the luminescent images before and after the application of voltage, followed by image processing to observe the changes in luminescence intensity of pixels with different thicknesses.

Experimental Results:

Non-contact non-destructive in-situ detection experimental results for quantum dot thin films 1 Non-contact non-destructive in-situ detection experimental results for quantum dot thin films 2 By altering the voltage applied to the quantum dot thin film, the degree of photoluminescence quenching can be observed. Within the voltage range of 2800 Vpp to 4000 Vpp, the quenching degree of the quantum dot thin film increases with rising voltage. Additionally, fitting the quenching efficiency as a function of the applied voltage reveals a good fit, indicating that there is a functional relationship between the photoluminescence quenching degree of the quantum dot thin film and the magnitude of the applied voltage. Based on this experimental pattern, for arrays of quantum dot thin films with varying thicknesses, the thickness information of the quantum dot thin films can be visualized by observing the changes in their photoluminescence microscopic images.

Power Amplifier Recommendation: ATA-7025 High-Voltage Amplifier

Figure: Performance Parameters of the ATA-7025 High-Voltage Amplifier

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