Application Cases

Experiment Name：

Application of High-Voltage Amplifier in the Design and Optimization of Scanning Solid-Cavity Fabry-Pérot Interferometer

Experimental Objective：

To optimize the design of a scanning solid-cavity Fabry-Pérot (F-P) interferometer.

Experimental Equipment：

Light source, collimating and expanding system, electro-optic crystal under test (including driver), 4f system and CCD, signal generator, ATA-2161 high-voltage amplifier, oscilloscope.

Experimental Content：

To achieve all-day absolute detection of atmospheric temperature within the boundary layer, i.e., to precisely obtain the Rayleigh scattering spectrum of the atmosphere, a scanning solid-cavity F-P interferometer was designed by leveraging the F-P interference filtering technique and the electro-optic properties of crystals. The filtering performance of the interferometer was tested and optimized.

Experimental Procedure：

The figure shows the optical path of a transmission-type Mach-Zehnder interferometer, which is used for recording holograms. The main components of this setup include: light source, collimating and expanding system, electro-optic crystal under test (including driver), 4f system, and CCD.

Figure 1: System Diagram for Measuring the Relationship between Crystal Internal Uniformity and Refractive Index Modulation

The electro-optic crystal is driven by a high-voltage power supply, and a pulse square wave signal is generated by a function generator. This signal is then amplified by the ATA-2161 high-voltage amplifier and loaded onto the crystal to complete the electro-optic performance test of the crystal.

Figure 2: Calibration of the High-Voltage Module for the Electro-Optic Crystal

Experimental Results：

1. Holograms Recorded by CCD at Different Voltages

   
   
   

2. Changes in Crystal Refractive Index under Different Voltage Fields

The phase changes of the crystal in the phase map are averaged to obtain the phase changes of the crystal under different voltage fields. The changes in the refractive index of the crystal under different voltage fields are then calculated using the formula.

Figure: Comparison of Measured and Theoretical Values of Phase Modulation and Refractive Index Modulation